Quantum-based Mechanical Force Realization in Pico-Newton Range

We propose mechanical force realization based on flux quantization in the pico-Newton range. By controlling the number of flux quantum in a superconducting annulus, a force can be created as integer multiples of a constant step. For a 50 nm-thick Nb annulus with the inner and outer radii of 5 $\mu$m and 10 $\mu$m, respectively, and the field gradient of 10 T/m the force step is estimated to be 184 fN. The stability against thermal fluctuations is also addressed.Comment: 5 pages; 4 figure

Development of a Chaff Dispense Program for Target Tracking Radar Deception

This study aims to develop an appropriate chaff dispensing program to deceive the target tracking radar (TTR) effectively. Chaff is a countermeasure commonly used by fighter aircraft to deceive TTR. However, there has been a lack of methodology for calculating chaff dispense programs that take into account the specific characteristics of the fighter, chaff, and TTR. This study proposes a methodology that considers these variables to calculate chaff dispense programs and addresses this gap. The proposed method is demonstrated through TESS engagement, which shows its effectiveness in various engagement situations

Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors

Ferroelectrics are promising for nonvolatile memories. However, the difficulty of fabricating ferroelectric layers and integrating them into complementary metal oxide semiconductor (CMOS) devices has hindered rapid scaling. Hafnium oxide is a standard material available in CMOS processes. Ferroelectricity in Si-doped hafnia was first reported in 2011, and this has revived interest in using ferroelectric memories for various applications. Ferroelectric hafnia with matured atomic layer deposition techniques is compatible with three-dimensional capacitors and can solve the scaling limitations in 1-transistor-1-capacitor (1T-1C) ferroelectric random-access memories (FeRAMs). For ferroelectric field-effect-transistors (FeFETs), the low permittivity and high coercive field Ec of hafnia ferroelectrics are beneficial. The much higher Ec of ferroelectric hafnia, however, makes high endurance a challenge. This article summarizes the current status of ferroelectricity in hafnia and explains how major issues of 1T-1C FeRAMs and FeFETs can be solved using this material system

Broad Phase Transition of Fluorite-Structured Ferroelectrics for Large Electrocaloric Effect

Field-induced ferroelectricity in (doped) hafnia and zirconia has attracted increasing interest in energy-related applications, including energy harvesting and solid-state cooling. It shows a larger isothermal entropy change in a much wider temperature range compared with those of other promising candidates. The field-induced phase transition occurs in an extremely wide temperature range, which contributes to the giant electrocaloric effect. This article examines the possible origins of a large isothermal entropy change, which can be related to the extremely broad phase transitions in fluorite-structured ferroelectrics. While the materials possess a high entropy change associated with the polar–nonpolar phase transition, which can contribute to the high energy performance, the higher breakdown field compared with perovskites practically determines the available temperature range

Review and perspective on ferroelectric HfO₂-based thin films for memory applications

The ferroelectricity in fluorite-structure oxides such as hafnia and zirconia has attracted increasing interest since 2011. They have various advantages such as Si-based complementary metal oxide semiconductor-compatibility, matured deposition techniques, a low dielectric constant and the resulting decreased depolarization field, and stronger resistance to hydrogen annealing. However, the wake-up effect, imprint, and insufficient endurance are remaining reliability issues. Therefore, this paper reviews two major aspects: the advantages of fluorite-structure ferroelectrics for memory applications are reviewed from a material’s point of view, and the critical issues of wake-up effect and insufficient endurance are examined, and potential solutions are subsequently discussed

Clinical Efficacy of Near-Infrared Reflectance Imaging and Optical Coherence Tomography in Identifying Ocular Manifestations of Neurofibromatosis Type 1 in Korean Children

Purpose The aim of this study was to investigate the clinical efficacy of near-infrared reflectance (NIR) imaging and optical coherence tomography (OCT) in identifying ocular manifestations of neurofibromatosis type 1 (NF1) in Korean children. Methods This retrospective chart review study included five Korean children with NF1 aged under 18 years who had undergone ophthalmic procedures, including slit-lamp examinations, NIR imaging, and OCT scanning. Results Multiple patchy bright lesions were observed on NIR imaging in all eyes (10 eyes in five patients). Further NIR imaging and OCT scans showed that these lesions, confined to the choroid, were choroidal nodules. Lisch nodules, contrastingly, were found in only four of 10 eyes by slit-lamp examinations on the same day as the NIR imaging. One of those four eyes had only one Lisch nodule, which did not meet the NF1 diagnostic criteria. Conclusion NIR imaging enabled the detection of choroidal nodules in Korean children with NF1. Moreover, for Korean children with NF1, choroidal nodules were earlier-detected ocular manifestations relative to Lisch nodules. NIR imaging, along with OCT, is a useful protocol for localizing NF1 nodules in children

Development of a Chaff Dispense Program for Target Tracking Radar Deception

This study aims to develop an appropriate chaff dispensing program to deceive the target tracking radar (TTR) effectively. Chaff is a countermeasure commonly used by fighter aircraft to deceive TTR. However, there has been a lack of methodology for calculating chaff dispense programs that take into account the specific characteristics of the fighter, chaff, and TTR. This study proposes a methodology that considers these variables to calculate chaff dispense programs and addresses this gap. The proposed method is demonstrated through TESS engagement, which shows its effectiveness in various engagement situations

DS-ARP: A New Detection Scheme for ARP Spoofing Attacks Based on Routing Trace for Ubiquitous Environments

Despite the convenience, ubiquitous computing suffers from many threats and security risks. Security considerations in the ubiquitous network are required to create enriched and more secure ubiquitous environments. The address resolution protocol (ARP) is a protocol used to identify the IP address and the physical address of the associated network card. ARP is designed to work without problems in general environments. However, since it does not include security measures against malicious attacks, in its design, an attacker can impersonate another host using ARP spoofing or access important information. In this paper, we propose a new detection scheme for ARP spoofing attacks using a routing trace, which can be used to protect the internal network. Tracing routing can find the change of network movement path. The proposed scheme provides high constancy and compatibility because it does not alter the ARP protocol. In addition, it is simple and stable, as it does not use a complex algorithm or impose extra load on the computer system

Topography-Guided Spreading and Drying of 6,13-bis(triisopropylsilylethynyl)-pentacene Solution on a Polymer Insulator for the Field-Effect Mobility Enhancement

We report on the enhancement of the field-effect mobility of solution-processed 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-pentacene) by unidirectional topography (UT) of an inkjet-printed polymer insulator. The UT leads to anisotropic spreading and drying of the TIPS-pentacene droplet and enables to spontaneously develop the ordered structures during the solvent evaporation. The mobility of the UT-dictated TIPS-pentacene film (0.202 ± 0.012 cm2/Vs) is found to increase by more than a factor of two compared to that of the isotropic case (0.090 ± 0.032 cm2/Vs). The structural arrangement of the TIPS-pentacene molecules in relation to the mobility enhancement is described within an anisotropic wetting formalism. Our UT-based approach to the mobility enhancement is easily applicable to different classes of soluble organic field-effect transistors by adjusting the geometrical parameters such as the height, the width, and the periodicity of the UT of an inkjet-printed insulator